Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1−x(AlN)x doped with terbium and its optical emission properties
✍ Scribed by R. Weingärtner; J.A. Guerra Torres; O. Erlenbach; G. Gálvez de la Puente; F. De Zela; A. Winnacker
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 397 KB
- Volume
- 174
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC) 1-x (AlN) x doped with terbium were grown by trial rf magnetron sputtering on CaF 2 and glass substrates. The optical bandgap of the films in dependence of the composition x has been determined from transmission measurements using the (˛h ) 2 versus energy plot and the Tauc-plot. The bandgap varies from 2.2 eV for x = 0 (SiC) to 4.7 eV for x = 0.94 (almost pure AlN) and can be described by Vegard's law using the bowing parameter (3.18 ± 1.01) eV. Cathodoluminescence measurements show the typical terbium emission pattern. Thermal activation of the thin films with isochronical annealing from 300 • C to 1150 • C leads to strong increase of the emission with an optimal annealing temperature of 1100 • C.