Semiconductor technology has evolved rapidly since the invention of the transistor in the late 1940s by Bardeen, Brattain, and Shockley. With this progress has come a host of experiments and theories of a fundamental character concerning the electronic structure of covalent semiconductor materials.
Band Structure Engineering in Semiconductor Microstructures
β Scribed by Richard M. Martin (auth.), R. A. Abram, M. Jaros (eds.)
- Publisher
- Springer US
- Year
- 1989
- Tongue
- English
- Leaves
- 382
- Series
- NATO ASI Series 189
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstrucΒ tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
β¦ Table of Contents
Front Matter....Pages i-xi
Comments on βCan Band Offsets be Changed Controllably?β....Pages 1-6
The Pressure Dependent Band Offset in a Type II Superlattice, a Test for Band Line-Up Theories....Pages 7-20
Electronic Properties of Semiconductor Interfaces: The Control of Interface Barriers....Pages 21-31
Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlattices....Pages 33-49
Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?....Pages 51-60
The Physics of Hg-Based Heterostructures....Pages 61-80
Valence Band Discontinuities in H g T e -CdTe-ZnTe Heterojunction Systems....Pages 81-98
Exact Envelope Function Equations for Microstructures and the Particle in a Box Model....Pages 99-109
A Method for Calculating Electronic Structure of Semiconductor Superlattices: Perturbation....Pages 111-117
The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties....Pages 119-127
AB-Initio Molecular Dynamics Studies of Microclusters....Pages 129-135
Quantum Interference in Semiconductor Devices....Pages 137-147
A Review of Recent Developments in Resonant Tunnelling....Pages 149-166
Observation of Ballistic Holes....Pages 167-176
Quantum Transport Theory of Resonant Tunneling Devices....Pages 177-185
Hot Electron Effects in Microstructures....Pages 187-200
Models for Scattering and Vertical Transport in Microstructures and Superlattices....Pages 201-215
Electron Beam Source Molecular Beam Epitaxy of Al x Ga lβx As Graded Band Gap Device Structures....Pages 217-223
Future Trends in Quantum Semiconductor Devices....Pages 225-231
Novel Optical Properties of InGaAs-Inp Quantum Wells....Pages 233-246
Time Resolved Spectroscopy of GaAs/AlGaAs Quantum Well Structures....Pages 247-252
Recombination Mechanisms in a Type II GaAs/AlGaAs Superlattice....Pages 253-258
Interface Recombination in GaAs-GaAlAs Quantum Wells....Pages 259-268
The Interface as a Design Tool for Modelling of Optical and Electronic Properties of Quantum Well Devices....Pages 269-278
Characterization and Design of Semiconductor Lasers Using Strain....Pages 279-301
Photoreflectance and Photoluminescence of Strained In x Ga lβx As/GaAs Single Quantum Wells....Pages 303-310
Excitons in Quantum Well Structures....Pages 311-324
Fourier Determination of the Hole Wavefunctions in P-Type Modulation Doped Quantum Wells by Resonant Raman Scattering....Pages 325-339
Optical Properties of Semiconductor Superlattices....Pages 341-358
AB-Initio Calculated Optical Properties of [001] (GaAs) n -(AlAs) n Superlattices....Pages 359-365
Effect of a Parallel Magnetic Field on the Hole Levels in Semiconductor Superlattices....Pages 367-373
Profit from Heterostructure Engineering....Pages 375-382
Back Matter....Pages 383-388
β¦ Subjects
Solid State Physics;Spectroscopy and Microscopy;Condensed Matter Physics;Crystallography;Electrical Engineering;Optical and Electronic Materials
π SIMILAR VOLUMES
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books
<span><p>Semiconductors form the basis for the nano-electronics industry that powers everyday life. This book covers the electronic band structure, the lattice dynamics and the transport properties of semiconductors, and is an essential guide for first-year graduate level students.</p></span>
This comprehensive, applications-oriented survey of the state-of-the art in Electromagnetic Band Gap (EBG) engineering explains the theory, analysis, and design of EBG structures. It helps you to understand EBG applications in antenna engineering through an abundance of novel antenna concepts, a wea