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Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission
✍ Scribed by Coluzza, C.; Lama, F.; Frova, A.; Perfetti, P.; Quaresima, C.; Capozi, M.
- Book ID
- 121484226
- Publisher
- American Institute of Physics
- Year
- 1988
- Tongue
- English
- Weight
- 616 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.341506
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