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Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering
✍ Scribed by Reithmaier, J.‐P.; Hoger, R.; Riechert, H.; Heberle, A.; Abstreiter, G.; Weimann, G.
- Book ID
- 119942305
- Publisher
- American Institute of Physics
- Year
- 1990
- Tongue
- English
- Weight
- 661 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.102737
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