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Band-gap narrowing and potential fluctuation in Si-doped GaN

✍ Scribed by Lee, In-Hwan; Lee, J. J.; Kung, P.; Sanchez, F. J.; Razeghi, M.

Book ID: 118057355
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 381 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.122964

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