๐”– Bobbio Scriptorium
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Ballistic electrons and holes observed in a semiconductor

โœ Scribed by Heiblum, M.


Book ID
115435847
Publisher
The Optical Society
Year
1988
Weight
511 KB
Volume
14
Category
Article
ISSN
0098-907X

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๐Ÿ“œ SIMILAR VOLUMES


Ballistic Electrons in Semiconductors
โœ Heiblum, Mordehai; Eastman, Lester F. ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Nature Publishing Group ๐ŸŒ English โš– 583 KB
The transport of injected electrons and
โœ Rudolf Gevers ๐Ÿ“‚ Article ๐Ÿ“… 1955 ๐Ÿ› Elsevier Science โš– 414 KB

By using Laplace transformation, the solution of the system of differential equations, describing the transport of added current carriers in a homogeneous semiconductor, can be found to a high degree of approximation for the small signal case and for sufficient small concentrations of added carriers

Ballistic and dissipative electron trans
โœ G. Strasser; C. Rauch; K. Unterrainer; W. Boxleitner; E. Gornik ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 206 KB

Ballistic electron transport is used to study the transmittance of GaAs=GaAlAs superlattices. In a three terminal device an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice and the transmitted current is measured as a function of the injector energy. Sign