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Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

✍ Scribed by V. Dubec; S. Bychikhin; D. Pogany; E. Gornik; T. Brodbeck; W. Stadler


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
570 KB
Volume
47
Category
Article
ISSN
0026-2714

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✦ Synopsis


Transient interferometric mapping (TIM) setup for ns-time ESD testing is adapted for post-stress failure analysis. Probing from the chip backside using the thermo-optical effect is used for localization of heating place related to failure. Two variants of 2D holographic interferometers, a Michelson and a ''Wollaston'' one, are used for a rough identification of a failure site. An adapted scanning heterodyne interferometer is used for accurate position determination with a 2 lm space resolution. The methods are applied to identify ESD damage and metal shorts. Sensitivity and space resolution are analyzed, supported by a 3D-thermal simulation of repetitive heating signal. A power sensitivity of 50 lW for a single point heat source is demonstrated.