Back-scattering and X-ray-induced correction factors for AES of thin overlayers: Influence on lateral resolution
✍ Scribed by E. Valamontes; A. G. Nassiopoulos; N. Glezos
- Book ID
- 104592611
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 394 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Abstract
Some results on Monte‐Carlo calculations of back‐scattering and x‐ray‐induced correction factors for AES on thin overlayers have been given in a previous paper. In this work, further results are given concerning both correction factors and the lateral resolution in the primary beam energy range 5–60 keV. The x‐ray‐induced correction factors include both characteristic and continuous x‐rays created in the bulk by the primary electron beam or by back‐scattered electrons that contribute to the creation of Auger electrons within the film on their way out of the sample. The contribution of continuous x‐rays, negligible at low primary beam energies, is found to be important at energies of >20 keV. The influence of back‐scattering on the lateral resolution in the primary beam energy range 20–60 keV has also been studied.