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Back gatebias effects on the pull-down transient behavior in an ultra-thin SOI CMOS inverter operating at 300 K and 77 K

โœ Scribed by J.B. Kuo; W.C. Lee; J.H. Sim


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
305 KB
Volume
35
Category
Article
ISSN
0038-1101

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