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Back Cover: Study of defects and lifetime of green InGaN laser diodes (Phys. Status Solidi A 3/2012)

✍ Scribed by Strauss, Uwe ;Lermer, Teresa ;Müller, Jens ;Hager, Thomas ;Brüderl, Georg ;Avramescu, Adrian ;Lell, Alfred ;Eichler, Christoph


Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
150 KB
Volume
209
Category
Article
ISSN
0031-8965

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Study of defects and lifetime of green I
✍ Strauss, Uwe ;Lermer, Teresa ;Müller, Jens ;Hager, Thomas ;Brüderl, Georg ;Avram 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 615 KB

## Abstract InGaN quantum wells for direct green lasers with indium concentrations of about 30% are studied in respect to defect structure and influence of defects on device lifetime. A new test structure enables us to determine strain relaxation in In‐rich layers by X‐ray diffraction even at typic