Author index volume 48

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 640 KB
• Volume: 48
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(98)00441-9

✦ Synopsis

Flietner and W. Fuhs, Two types of traps at the Si/SiO 2 interface characterized by their cross sections Alers, G., see Lu, H. Anthony, C. and M. Uren, Effect of post oxidation processing on dry oxides on n-type 4H-SiC Antonova, I., V. Popov, V. Stas, A. Gutakovskii, A. Plotnikov and V. Obodnikov, Splitting and electrical properties of the SO1 structure formed from the heavily boron doped silicon with using of the smart-cut technology Asli, N., S. Gastev, I. Grekhov, P. Seegebrecht, A. Shulekin, S. Tyaginov, M.

Vexler and H. Zimmermann, A1/SiOz(2.0-2.5 nm)/p-Si tunnel junction as a light emitter Autran, J., see Masson, P.