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Auger recombination in GaInN/GaN quantum well laser structures

✍ Scribed by Brendel, M.; Kruse, A.; Jonen, H.; Hoffmann, L.; Bremers, H.; Rossow, U.; Hangleiter, A.


Book ID
119941624
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
790 KB
Volume
99
Category
Article
ISSN
0003-6951

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We studied the development of V-shaped defects in GaInNΒ±GaN quantum well superlattices. We observed that these defects could not be suppressed by varying growth parameters like strain, In content, GaInN growth temperature etc. However, perfect superlattices without such defects could be grown by cyc