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Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

✍ Scribed by Huolin Huang, ; Liang, Yung C.; Samudra, Ganesh S.; Ngo, Cassandra Low Lee


Book ID
125519445
Publisher
IEEE
Year
2014
Tongue
English
Weight
728 KB
Volume
35
Category
Article
ISSN
0741-3106

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