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Atomization energy and standard heat of formation of gaseous diatomic arsenic

โœ Scribed by Kordis, Josef; Gingerich, Karl A.

Book ID
121184503
Publisher
American Chemical Society
Year
1973
Tongue
English
Weight
232 KB
Volume
18
Category
Article
ISSN
0021-9568

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A high-temperature mass-spectrometric study of the vaporization of (silicon+boron nitride) from a boron-nitride Knudsen cell was conducted in the temperature range T = 1688 K to 1921 K. The partial pressures of Si(g), Si2(g), N2(g), and Si2N(g) were determined. The dissociation reaction: Si2N(g)=2Si

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The atomizatioc energzy. D&. of the molecule ThC3 has been determined by Knudsen ceil mass spectrometry as 1840 2 33 'kJ mot-\* \_ This value can be interpreted in terms of the bond additivity concept assuming a C-M -Cz structure. Estimated atomization energies are presented for several zot yet kno=