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Atomistic simulation of point defects in silicon at high temperature

โœ Scribed by Sinno, Talid; Jiang, Z. Kurt; Brown, Robert A.


Book ID
121683459
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
273 KB
Volume
68
Category
Article
ISSN
0003-6951

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Atomistic simulation of cristobalite at
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Lattice-dynamics and molecular-dynamics simulations based on the Born model of solids have been used to investigate the structural disorder present in the โค phase of cristobalite. We used both shell and rigid-ion interatomic potentials and compared with available experimental data the values predict