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Atomistic model structure of the Ge(1 0 0)–GeO2 interface

✍ Scribed by Peter Broqvist; Jan Felix Binder; Alfredo Pasquarello


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
326 KB
Volume
86
Category
Article
ISSN
0167-9317

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GeO 2 was proposed as valuable passivation layer at the surface with Ge to integrate oxide with high dielectric constant in Ge-based logic devices. Hence, the identification of the defects present at different Ge/GeO 2 interfaces becomes a mandatory issue to predict the electrical features of device