✦ LIBER ✦

Atomically flat interface in SiGe/Si heterostructures formed by solid phase epitaxy: Significant increase in two-dimensional electron mobility

✍ Scribed by M. Miyao; K. Nakagawa; N. Sugii; S. Yamaguchi

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 266 KB
Volume: 47
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(99)00200-2

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✦ Synopsis

A new SiGelSi heterostructure is fabricated through a combination of molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). The hetro-interface obtained by SPE was atomically flat, as confirmed by transmission electron microscope (TEM) observation. This interface enables an ultrahigh electron mobility of the two-dimensional electron gas (2DEG).