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Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions

โœ Scribed by J.W Klaus; S.J Ferro; S.M George


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
539 KB
Volume
162-163
Category
Article
ISSN
0169-4332

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Al O and SiO were deposited on BN particles with atomic layer control using alternating exposures of Al CH rH O 2 3 2 3 3 2 and SiCl rH O, respectively. The sequential surface chemistry was monitored in vacuum using transmission Fourier 4 2 ลฝ . transform infrared FTIR spectroscopy studies on high su