Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

✍ Scribed by Ligatchev, V.; Wong, T. K. S.; Liu, B.; Rusli,

• Book ID: 120351304
• Publisher: American Institute of Physics
• Year: 2002
• Tongue: English
• Weight: 376 KB
• Volume: 92
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1507811