Atomic steps on Si{100} and step dynamics during sublimation studied by low-energy electron microscopy
✍ Scribed by M. Mundschau; E. Bauer; W. Telieps; W. Świeçh
- Publisher
- Elsevier Science
- Year
- 1989
- Weight
- 90 KB
- Volume
- 223
- Category
- Article
- ISSN
- 0167-2584
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Reactive ion etching and reactive ion beam etching are common anisotropic etch processes in silicon microdevice fabrication. Unfortunately, they are also known to create electrically active defects in the bulk material. It is possible to detect these active defects with the electron-beam-induced cur
We have investigated a quasi-one-dimensional structure of Si(1 1 1)-8 Â 2-In surface using reflection high-energy positron diffraction (RHEPD) and scanning tunneling microscopy (STM). From the RHEPD rocking curve analyses, we confirmed the formation of the In hexagon structure proposed by Gonza ´lez
Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 • 10 16 at. cm À2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on