Atomic scale engineering of nanostructur
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Patrick Soukiassian; Vincent Derycke; Fabrice Semond; Victor Yu. Aristov
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Article
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2005
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Elsevier Science
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English
β 669 KB
The atomic scale ordering and properties of cubic silicon carbide surfaces are investigated by room and high-temperature scanning tunneling microscopy. In this review, we will focus on the Si-terminated b-SiC(100) surfaces only. Self-formation of Si atomic lines and dimer vacancy chains on the b-SiC