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Atomic-level computer simulation of SiC: defect accumulation, mechanical properties and defect recovery

โœ Scribed by Gao, F.; Weber, W. J.

Book ID
127191386
Publisher
Taylor and Francis Group
Year
2005
Tongue
English
Weight
242 KB
Volume
85
Category
Article
ISSN
1478-6435

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Atomic Computer Simulation: Large Scale
Atomic Computer Simulation: Large Scale Calculations of Defect Properties by Empirical Potentials
โœ A. Serra ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 390 KB ๐Ÿ‘ 2 views

This paper is aimed at introducing computer simulation of extended defects in crystalline materials by means of empirical potentials. In this context we understand by large scale calculations those related to a number of atoms from 10 3 to 10 6 and/or a time scale of few nanoseconds (10 2 -10 4 ps)