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Atomic layer deposition of Zn1−xMgxO:Al transparent conducting films

✍ Scribed by Luka, G.; Witkowski, B. S.; Wachnicki, L.; Goscinski, K.; Jakiela, R.; Guziewicz, E.; Godlewski, M.; Zielony, E.; Bieganski, P.; Placzek-Popko, E.; Lisowski, W.; Sobczak, J. W.; Jablonski, A.

Book ID
121592816
Publisher
Springer
Year
2013
Tongue
English
Weight
606 KB
Volume
49
Category
Article
ISSN
0022-2461

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Transparent and conductive undoped zinc
Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
✍ Luka, Grzegorz ;Krajewski, Tomasz ;Wachnicki, Lukasz ;Witkowski, Bartlomiej ;Lus 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 582 KB

## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn)