Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric

✍ Scribed by Lee, Jae-Seung; Kim, Woo-Hee; Oh, Il-Kwon; Kim, Min-Kyu; Lee, Gyeongho; Lee, Chang-Wan; Park, Jusang; Lansalot-Matras, Clement; Noh, Wontae; Kim, Hyungjun

• Book ID: 122108256
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 993 KB
• Volume: 297
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2014.01.032