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Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems

✍ Scribed by I.M. Povey; M. Bardosova; F. Chalvet; M.E. Pemble; H.M. Yates


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
349 KB
Volume
201
Category
Article
ISSN
0257-8972

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✦ Synopsis


In order to highlight the way in which atomic layer deposition (ALD) methods may be used to prepare complex 3D structures, we consider the modification of photonic crystals such as synthetic opals that may be readily prepared from monodispersed assemblies of colloidal particles. In such materials it is well established that the photonic gap can be significantly influenced by the infiltration of the voids within the photonic crystal with a material of higher dielectric constant. In this paper we highlight the ALD infiltration of photonic crystals with Al 2 O 3 and VO 2 , discussing our findings in the light of previous studies of photonic crystal infiltration. We briefly comment on the morphology of the resulting deposits in relation to the growth method employed to grow them.


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Atomic layer deposition of Cr 2 O 3 thin films from CrO 2 Cl 2 and CH 3 OH on amorphous SiO 2 and crystalline Si(1 0 0) and a-Al 2 O 3 (1 1 0 2) substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05-0.1 nm/cycle was obtained at substrate t