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Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si(001)2×1

✍ Scribed by Chen, X.; Saldin, D. K.; Bullock, E. L.; Patthey, L.; Johansson, L. S. O.; Tani, J.; Abukawa, T.; Kono, S.

No coin nor oath required. For personal study only.

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