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Atomic bonding at the Si-Au and Si-Cu interfaces

โœ Scribed by H. Dallaporta; A. Cros


Publisher
Elsevier Science
Year
1986
Weight
63 KB
Volume
178
Category
Article
ISSN
0167-2584

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Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN ร€ ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concent