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Atomic and electrostatic force microscopy observations on gallium nitride

✍ Scribed by Girard, P. ;Cadet, Ph. ;Ramonda, M. ;Shmidt, N. ;Usikov, A. N. ;Lundin, W. V. ;Dunaevskii, M. S. ;Titkov, A. N.


Book ID
105362118
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
566 KB
Volume
195
Category
Article
ISSN
0031-8965

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## Abstract The growth of hexagonal Boron Nitride films (__h__‐BN) on 6H‐SiC (0001) using plasma‐excited borazine has been studied. On 6H‐SiC (0001), the growth of pin‐hole free, compact __h__‐BN film is difficult due to poor wetting properties between __h__‐BN and 6H‐SiC. The strained BN layer rel