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Atomic and electronic properties of spherical silicon clusters

✍ Scribed by Şakir Erkoç; Şenay Katırcıoǧlu


Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
149 KB
Volume
4
Category
Article
ISSN
1386-9477

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✦ Synopsis


We have investigated the atomic and electronic properties of spherical ideal SiN clusters (N = 5-417) using the empirical many-body potential energy function consisting of two-and three-body interactions, and by empirical tight-binding calculations, respectively. It has been found that the average interaction energy per atom decreases as the cluster size increases, and it becomes almost constant after the size N ¿275. On the other hand, the band gap shows cluster size dependent characteristics; the band gap decreases as the cluster size increases.


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