✦ LIBER ✦
Atom-rearrangement in Ge layer grown on Si substrate during anneal observed in real time by coaxial impact collision ion scattering spectroscopy
✍ Scribed by T. Saitoh; M. Tamura; J.E. Palmer; T. Yodo
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 442 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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