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Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations

✍ Scribed by N. Herres; G. Bender; G. Neumann

Book ID
103615718
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
292 KB
Volume
50
Category
Article
ISSN
0169-4332

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## Abstract Spatially resolved rocking curve imaging has been used to analyze laterally overgrown silicon layers grown by liquid phase epitaxy. We were able to study both the overgrown layer as well as the strain fluctuations of the Si substrate underneath by means of a tabletop x‐ray topographic s