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Argon content of Si and SiO2 films deposited through RF sputtering in argon: R E Jones, M A Zuegel and G G Schwartz, IBM Components Division, East Fishkill Facility, Hopewell Junction, NY 12533, USA


Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
117 KB
Volume
18
Category
Article
ISSN
0042-207X

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