Si-doped GaN/AlN quantum dot superlattic
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Guillot, F. ;Tchernycheva, M. ;Nevou, L. ;Doyennette, L. ;Monroy, E. ;Julien, F.
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Article
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2006
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John Wiley and Sons
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English
⚖ 217 KB
## Abstract We report on the controlled growth of Si doped GaN/AlN quantum dot (QD) superlattices, in order to tailor their intersubband absorption within the 1.3–1.5 µm telecommunication wavelengths. The QD size is tuned by modifying the amount of GaN in the QDs and the growth temperature. Silicon