High-finesse mid infrared microcavities
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T Schwarzl; W HeiΓ; G Springholz
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Article
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2000
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Elsevier Science
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English
β 169 KB
Microcavities for the mid-infrared range with very high quality factors were fabricated by molecular beam epitaxial growth of IV-VI semiconductor layers. The samples consist of PbTe=EuTe and Pb0:95Eu0:05Te=EuTe Bragg mirrors with three to ΓΏve layer pairs rendering re ectivities well above 99%. The t