Application of the field-theoretic method of Bohm and Pines to a study of the metal–insulator transition in doped dielectric media
✍ Scribed by Lawrence J. Dunne
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 238 KB
- Volume
- 71
- Category
- Article
- ISSN
- 0020-7608
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✦ Synopsis
A treatment based on the field-theoretic formalism of Bohm and Pines is presented which reproduces theoretically the essential features of the U 1 1r3 Mott᎐Edwards᎐Sienko relation, n a ; , for the location of the metal᎐insulator c H 4 transition in doped dielectric media, where n is the critical electron concentration and c a U is the effective radius. The model allows a study to be made of the dopant electronic H
wave function from the localized insulating state through to the metallic regime. The effective interparticle interaction shows Friedel oscillations and, at short range, is close to the Thomas᎐Fermi form. The doping dependence of the electronic hyperfine interaction, total dielectric constant, and ionization energy for a disordered collection of s-state one-electron atoms in a structureless dielectric medium are derived and both are found to be in satisfactory qualitative agreement with experiment.