APPLICATION OF THE COLLOCATION METHOD IN THREE DIMENSIONS TO A MODEL SEMICONDUCTOR PROBLEM

✍ Scribed by J. F. MARCHIANDO

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 768 KB
• Volume: 39
• Category: Article
• ISSN: 0029-5981
• DOI: 10.1002/(sici)1097-0207(19960330)39:6<1029::aid-nme893>3.0.co;2-h

✦ Synopsis

A research code has been written to solve an elliptic system of coupled non-linear partial differential equations of conservation form on a rectangularly shaped three-dimensional domain. The code uses the method of collocation of Gauss points with tricubic Hermite piecewise continuous polynomial basis functions. The system of equations is solved by iteration. The system of non-linear equations is linearized, and the system of linear equations is solved by iterative methods. When the matrix of the collocation equations is duly modified by using a scaled block-limited partial pivoting procedure of Gauss elimination, it is found that the rate of convergence of the iterative method is significantly improved and that a solution becomes possible. The code is used to solve Poisson's equation for a model semiconductor problem. The electric potential distribution is calculated in a metal-oxide-semiconductor structure that is important to the fabrication of electron devices.