Application of statistical dynamical diffraction theory to highly defective ion implanted SiGe heterostructures

✍ Scribed by Shreeman, P. K. ;Matyi, R. J.

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 620 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201184250

✦ Synopsis

Abstract

The statistical dynamical diffraction theory (SDDT) provides a method for performing high resolution X‐ray diffraction (HRXRD) analyses from materials that contain high levels of structural imperfection. SDDT is implemented by combining kinematical and dynamical diffraction formalisms into a single framework through the inclusion of two parameters (a static Debye–Waller factor and a correlation length) that can provide an adjustable coupling between the kinematic and dynamic extremes. Typically one of the prominent difficulties in implementing SDDT is the mathematical complexities that are characteristic of this theory. Recently we have demonstrated a simplified realization of SDDT [Shreeman and Matyi, J. Appl. Crystallogr. 43, 550 (2010)] that preserves the essential features of the theory while allowing it to be applied to a variety of structures. Here we show the viability of this approach by fitting various experimental HRXRD data from highly defective and partially relaxed Si~0.70~Ge~0.30~ ion implanted heterostructures. This study demonstrates the capabilities the SDDT theory provides for HRXRD analyses of highly defective semiconductor materials.