Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation
✍ Scribed by R. Yasuhara; T. Taniuchi; H. Kumigashira; M. Oshima; F. Guo; T. Kinoshita; K. Ono; K. Ikeda; G.-L. Liu; Z. Liu; K. Usuda
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 671 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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✦ Synopsis
We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultrahigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO 2 /Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/ HfO 2 /Si, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO 2 /Si and poly-Si/HfO 2 /Si.