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Application of low-impurity concentration (high-resistivity) Si epitaxial technique to high-voltage power transistors

✍ Scribed by Suzuki, T.; Ura, M.; Ogawa, T.


Book ID
114592164
Publisher
IEEE
Year
1976
Tongue
English
Weight
461 KB
Volume
23
Category
Article
ISSN
0018-9383

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