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Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

✍ Scribed by Jürgen O Schumacher; Pietro P Altermatt; Gernot Heiser; Armin G Aberle


Book ID
108472162
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
193 KB
Volume
65
Category
Article
ISSN
0927-0248

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