Antisite creation in ternary semiconductors by transmutation doping

✍ Scribed by M. Dietrich; C. Camard; K. Potzger; S. Unterricker; A. Weber

• Book ID: 104080760
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 239 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.202

✦ Synopsis

Ternary semiconductors &A II B 2 III C 4 VI with defect chalcopyrite structure offer the possibility to study various cation antisites in a single substance. We report on experiments aiming to position a B-atom, namely In, on the vacancy site, labelled B & . Radioactive 117 Ag (T 1=2 ¼ 73 s), decaying to 117 Cd (T 1=2 ¼ 2:4 h) and furthermore to 117 In, was implanted into &CdGa 2 Se 4 and incorporated at the vacancy-site by in situ thermal annealing. We have determined the lattice site of 117 Cd( 117 In) by perturbed g-g angular correlation (PAC) spectroscopy as the Cd-site ( 117 In Cd ) and not 117 In & . This is explained with 117 Cd being expelled from the vacancy-site due to the recoil following the nuclear decay of 117 Ag. The displacement energy of Cd & has been estimated to be smaller than 16 eV.