Study of structure and surface modificat
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Rucha H. Polji; A.D. Yadav; S.K. Dubey; P. Kumar; D. Kanjilal
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Article
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2009
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Elsevier Science
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English
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Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (โฅ 1 ร 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an