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Anomalous phosphorous diffusion

โœ Scribed by Suzuki, K.; Tashiro, H.; Tada, Y.; Kataoka, Y.


Book ID
114616887
Publisher
IEEE
Year
2002
Tongue
English
Weight
339 KB
Volume
49
Category
Article
ISSN
0018-9383

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In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 ร‚ 10 13 and 10 15 cm ร€2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80