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Anomalous phonon behaviour in V3Si

✍ Scribed by M. Yethiraj


Publisher
Springer
Year
2002
Tongue
English
Weight
108 KB
Volume
74
Category
Article
ISSN
1432-0630

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Raman measurements on ZnSe/GaAs heterostructures show unusual behaviour of the optical phonon modes from ZnSe. High epitaxy rates are responsible for both poor structural quality at the interface and Fermi level pinning by carrier traps. The Ðrst e †ect gives rise, beyond a critical thickness, to po