We have measured a pulsed laser induced transient Nernst-Ettingshausen (TNE) effect for semimetal Bi and for nearly gapless materials Bi-Sb and Bi-Te alloy single crystals at 4.2 K and under magnetic fields up to 4 T. We have found the giant longitudinal-TNE (l-TNE) and transverse-TNE (t-TNE) signal
Anomalous magneto-transport properties in nearly gapless materials
β Scribed by M. Sasaki; A. Ohnishi; N. Satoh; K. Suga; K. Kindo; K. Inomata; H. Ebina; S.J. Lee
- Publisher
- Elsevier
- Year
- 2010
- Tongue
- English
- Weight
- 431 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1875-3892
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β¦ Synopsis
We have measured magnetoresistance (MR) for semimetals Bi and graphite, nearly gapless materials Bi-Sb and Bi-Te alloys, and narrow gap semiconductor Ag 2 Se single crystals at 4.2 K and up to 4 T. We have observed a giant MR for Bi, a giant linear MR (LMR) for Bi-Sb alloy and Ag 2 Se single crystals. Anomalous completely linear weak-field LMR has been found for nearly gapless materials: this is transferred into the ordinal MR or other LMR in relatively strong field range. It suggests the linear band dispersion in nearly gapless materials as proposed by Abrikosov.
π SIMILAR VOLUMES
Electronic and magnetic structures in magnetic multilayers and granular alloys are examined. It is shown that the structures govern the giant magnetoresistance. We present a simulation method of the resistance and magnetoresistance based on the recursive Green's function method. By using this method