Anomalous behavior of discrete resistance fluctuation lifetimes in novel metal insulator-metal tunnel junctions
✍ Scribed by Xiuguang Jiang; J.C. Garland
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 209 KB
- Volume
- 165-166
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
Measurements are reported of the switching lifetimes of the discrete resistance fluctuations in Au-Al,O,-Au tunnel junctions which have small Al particles randomly embedded within the insulating barrier. The tunnel junctions are 50x50 pm2 and the Al particles are nominally disk-shaped with thickness about 30A and radius 5OOA. Tunnel M-I-M junctions which do not contain embedded metal particles typically have switching lifetimes that decrease exponentially with applied d.c. bias voltage. However, we have found that the presence of embedded panicles leads to anomalous behavior, in which the switching lifetimes increase with applied bias voltage. We ascribe this behavior to the interaction of defects with the charge state of the embedded Al particles.