Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β’ 10 17 , 2.5 β’ 10 17 and 5 β’ 10 17 ions cm Γ2 sequentially in the ratio 1:1 at 150 keV into p-type
β¦ LIBER β¦
Anodization of nanoscale Si layers in silicon-on-insulator structures
β Scribed by V. A. Antonov; E. V. Spesivtsev; I. E. Tyschenko
- Book ID
- 111444994
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 190 KB
- Volume
- 45
- Category
- Article
- ISSN
- 1063-7826
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