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Anode modification of polyfluorene-based polymer light-emitting devices

✍ Scribed by Fung, M. K.; Lai, S. L.; Tong, S. W.; Chan, M. Y.; Lee, C. S.; Lee, S. T.; Wu, W. W.; Inbasekaran, M.; OâBrien, J. J.

Book ID: 121270114
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 454 KB
Volume: 81
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1499519

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## Abstract It has recently been reported that, after electrical conditioning, an ohmic hole contact is formed in poly(9,9‐dioctylfluorene) (PFO)‐based polymer light‐emitting diodes (PLED), despite the large hole‐injection barrier obtained with a poly(styrene sulfonic acid)‐doped poly(3,4‐ethylened