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Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons

✍ Scribed by J Härkönen; E Tuominen; E Tuovinen; K Lassila-Perini; S Nummela; J Nysten; P Heikkilä; V Ovchinnikov; M Yli-Koski; L Palmu; S Kallijärvi; T Alanko; P Laitinen; A Pirojenko; I Riihimäki; G Tiourine; A Virtanen


Book ID
108414727
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
142 KB
Volume
512
Category
Article
ISSN
0168-9002

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Study of the annealing effect on silicon
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The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an