Annealing of ion implanted 4H–SiC in the temperature range of 100–800 °C analysed by ion beam techniques

✍ Scribed by M. Usman; M. Nour; A.Yu. Azarov; A. Hallén

• Book ID: 108224705
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 322 KB
• Volume: 268
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2010.02.020